Conductance fluctuations near Anderson transition

نویسندگان

  • Arindam Ghosh
  • A. K. Raychaudhuri
چکیده

In this paper we report measurements of conductance fluctuations in single crystal samples of Si doped with P and B close to the critical composition of the metal insulator transition (nc ≈ 4 × 10 cm). The measurements show that the noise, which arises from bulk sources, does not diverge as the Ioffe-Regal limit (kF l → 1) is approached from the metallic side. At room temperatures, the magnitude of the noise shows a shallow maximum around kF l ≈ 1.5 and drops sharply as the insulating state is approached. 71.30.+h,72.70.+m,71.55.Cn Typeset using REVTEX email: [email protected]. ernet.in email: [email protected]

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تاریخ انتشار 1999